IS45VM16160M - ISSI

IS45VM16160M 4M x 16Bits x 4Banks Mobile Synchronous DRAM

These IS42/45VM16160G are mobile 268,435,456 bits CMOS Synchronous DRAM organized as 4 banks of 4,194,304 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achie.

Features

▪ JEDEC standard1.8V power supply
• Auto refresh and self refresh
• All pins are compatible with LVCMOS interface
• 8K refresh cycle every 16ms (A2 grade) or 64ms (Industrial, A1 grade)
• Programmable Burst Length and Burst Type - 1, 2, 4, 8 or Full Page for Sequential Burst - 4 or 8 for Interleave Burst
• Programmable CAS Latency : 2,3 clocks
• All inputs and outputs referenced to the positive edge of the system clock
• Data mask function by DQM
• Internal 4 banks operation
• Burst Read Single Write operation
• Special Function Support - PASR(Partial Array Self Refresh) - Auto TCSR(Temperatu.