The device has 4352-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 4352-byte increments. The Erase operation is implemented in a single block unit (256Kbytes + 16Kbytes). Data in the page mode can be read out at 25ns cycle time per Word. The I/O pins serve as the ports for address a.
• Flexible & Efficient Memory Architecture
- Memory Cell: 1bit/Memory Cell - Organization: 512Mb x8, 256Mb x16 - Page Size for x8: (4K + 256) Bytes - Page Size for x16: (2K + 128) words - Block Size for x8: 64x (4K + 256) Bytes - Block Size for x16: 64x (2K + 128) words - Number of Plane = 1 - Number of Block per Die (LUN) = 2048
• ONFI 1.0 compliant
• Highest performance - Read Performance: - Random Read: 25us (Max.) - Serial Access: 25ns (Max.) - Write Performance: - Program time: 300us (typ.), 700us (max.) - Block Erase time: 3.5ms (typ.), 10ms (max.)
• Voltage and Temp. Ranges - Single 1.8.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IS35MW04G164 |
ISSI |
4Gb(x8/x16) 1.8V NAND FLASH MEMORY | |
2 | IS35MW04G084 |
ISSI |
4Gb(x8/x16) 1.8V NAND FLASH MEMORY | |
3 | IS35MW04G088 |
ISSI |
4Gb SLC-8b ECC 1.8V X8/X16 NAND FLASH MEMORY | |
4 | IS35MW01G084 |
ISSI |
1Gb (x8/x16) 1.8V NAND FLASH MEMORY | |
5 | IS35MW01G164 |
ISSI |
1Gb (x8/x16) 1.8V NAND FLASH MEMORY | |
6 | IS35MW02G084 |
ISSI |
2Gb(x8/x16) 1.8V NAND FLASH MEMORY | |
7 | IS35MW02G164 |
ISSI |
2Gb(x8/x16) 1.8V NAND FLASH MEMORY | |
8 | IS35ML01G081 |
ISSI |
1Gb (x8) 3.3V NAND FLASH MEMORY | |
9 | IS35ML01G084 |
ISSI |
1Gb(x8) 3.3V NAND FLASH MEMORY | |
10 | IS35ML02G084 |
ISSI |
2Gb(x8) 3.3V NAND FLASH MEMORY | |
11 | IS35ML04G0168 |
ISSI |
4Gb SLC-8b ECC | |
12 | IS35ML04G081 |
ISSI |
4Gb 3.3V X8 NAND FLASH MEMORY |