IS35MW04G088 - ISSI

IS35MW04G088 4Gb SLC-8b ECC 1.8V X8/X16 NAND FLASH MEMORY

The device has 4352-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 4352-byte increments. The Erase operation is implemented in a single block unit (256Kbytes + 16Kbytes). Data in the page mode can be read out at 25ns cycle time per Word. The I/O pins serve as the ports for address a.

Features

• Flexible & Efficient Memory Architecture - Memory Cell: 1bit/Memory Cell - Organization: 512Mb x8, 256Mb x16 - Page Size for x8: (4K + 256) Bytes - Page Size for x16: (2K + 128) words - Block Size for x8: 64x (4K + 256) Bytes - Block Size for x16: 64x (2K + 128) words - Number of Plane = 1 - Number of Block per Die (LUN) = 2048
• ONFI 1.0 compliant
• Highest performance - Read Performance: - Random Read: 25us (Max.) - Serial Access: 25ns (Max.) - Write Performance: - Program time: 300us (typ.), 700us (max.) - Block Erase time: 3.5ms (typ.), 10ms (max.)
• Voltage and Temp. Ranges - Single 1.8.