IRLR8729 - INCHANGE

IRLR8729 N-Channel MOSFET

isc N-Channel MOSFET Transistor IRLR8729,IIRLR8729 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤8.9mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fully characterized avalanche voltage and current ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VA.

Features

·Static drain-source on-resistance: RDS(on)≤8.9mΩ
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·DESCRITION
·Fully characterized avalanche voltage and current
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 30 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 58 IDM Drain Current-Single Pulsed 260 PD Total Dissipation @TC=25℃ 55 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS .