IRLR8729 |
Part Number | IRLR8729 |
Manufacturer | INCHANGE |
Description | isc N-Channel MOSFET Transistor IRLR8729,IIRLR8729 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤8.9mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust dev... |
Features |
·Static drain-source on-resistance: RDS(on)≤8.9mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fully characterized avalanche voltage and current ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 30 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 58 IDM Drain Current-Single Pulsed 260 PD Total Dissipation @TC=25℃ 55 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS ... |
Document |
IRLR8729 Data Sheet
PDF 239.04KB |
Distributor | Stock | Price | Buy |
---|
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRLR8721 |
INCHANGE |
N-Channel MOSFET | |
2 | IRLR8721PBF |
International Rectifier |
HEXFET Power MOSFET | |
3 | IRLR8721PBF-1 |
International Rectifier |
POWER MOSFET | |
4 | IRLR8726 |
International Rectifier |
Power MOSFET | |
5 | IRLR8726 |
INCHANGE |
N-Channel MOSFET |