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isc N-Channel MOSFET Transistor IRLR7821, IIRLR7821 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤10mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Frequency Synchronous Buck Converters For Computer Processor Power ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) .
·Static drain-source on-resistance:
RDS(on)≤10mΩ
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·High Frequency Synchronous Buck Converters For Computer
Processor Power
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
30
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
65
IDM
Drain Current-Single Pulsed
260
PD
Total Dissipation @TC=25℃
75
Tj
Max. Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃ ℃
·THE.
IRLR7821 - International Rectifier
PD - 94538B HEXFET Power MOSFET Applications l High Frequency Synchronous Buck Converters for Computer Processor Power .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRLR7821CPBF |
International Rectifier |
POWER MOSFET |
|
| 2 | IRLR7821PBF |
International Rectifier |
Power MOSFET |
|
| 3 | IRLR7807Z |
International Rectifier |
HEXFET Power MOSFET |
|
| 4 | IRLR7807Z |
INCHANGE |
N-Channel MOSFET |
|
| 5 | IRLR7807ZPBF |
International Rectifier |
HEXFET Power MOSFET |
|
| 6 | IRLR7811W |
International Rectifier |
SMPS MOSFET |
|
| 7 | IRLR7811WCPBF |
International Rectifier |
HEXFET Power MOSFET |
|
| 8 | IRLR7833 |
International Rectifier |
Power MOSFET |
|
| 9 | IRLR7833 |
INCHANGE |
N-Channel MOSFET |
|
| 10 | IRLR7833PBF |
International Rectifier |
Power MOSFET |
|
| 11 | IRLR7843 |
International Rectifier |
HEXFET Power MOSFET |
|
| 12 | IRLR7843 |
INCHANGE |
N-Channel MOSFET |
|