PD - 94662 IRLR7807Z IRLU7807Z Applications High Frequency Synchronous Buck Converters for Computer Processor Power Benefits Very Low RDS(on) at 4.5V VGS Ultra-Low Gate Impedance Fully Characterized Avalanche Voltage and Current HEXFET® Power MOSFET VDSS RDS(on) max Qg (typ.) 30V 13.8mΩ 7.0nC D-Pak IRLR7807Z I-Pak IRLU7807Z Absolute Maximum Ratings Par.
C/W Notes through are on page 11 www.irf.com 1 4/7/03 IRLR/U7807Z Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth G.
isc N-Channel MOSFET Transistor IRLR7807Z, IIRLR7807Z ·FEATURES ·Static drain-source on-resistance: RDS(on)≤13.8mΩ ·En.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRLR7807ZPBF |
International Rectifier |
HEXFET Power MOSFET | |
2 | IRLR7811W |
International Rectifier |
SMPS MOSFET | |
3 | IRLR7811WCPBF |
International Rectifier |
HEXFET Power MOSFET | |
4 | IRLR7821 |
International Rectifier |
HEXFET Power MOSFET | |
5 | IRLR7821 |
INCHANGE |
N-Channel MOSFET | |
6 | IRLR7821CPBF |
International Rectifier |
POWER MOSFET | |
7 | IRLR7821PBF |
International Rectifier |
Power MOSFET | |
8 | IRLR7833 |
International Rectifier |
Power MOSFET | |
9 | IRLR7833 |
INCHANGE |
N-Channel MOSFET | |
10 | IRLR7833PBF |
International Rectifier |
Power MOSFET | |
11 | IRLR7843 |
International Rectifier |
HEXFET Power MOSFET | |
12 | IRLR7843 |
INCHANGE |
N-Channel MOSFET |