SMD Type N-Channel MOSFET IRLML0100 (KRLML0100) MOSFET ■ Features ● VDS (V) = 100V ● ID = 1.6A (VGS = 10V) ● RDS(ON) < 220mΩ (VGS = 10V) ● RDS(ON) < 235mΩ (VGS = 4.5V) G1 S2 3D +0.22.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.2 0-0.1 +0.10.68 -0.1 +0.21.1 -0.1 +0.21.6 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 1. Gat.
● VDS (V) = 100V
● ID = 1.6A (VGS = 10V)
● RDS(ON) < 220mΩ (VGS = 10V)
● RDS(ON) < 235mΩ (VGS = 4.5V)
G1
S2
3D
+0.22.8 -0.1
SOT-23-3
2.9 +0.2 -0.1
0.4 +0.1 -0.1
3
12 0.95 +0.1
-0.1
1.9 +0.1 -0.2
0-0.1 +0.10.68
-0.1
+0.21.1 -0.1
+0.21.6 -0.1
0.55 0.4
Unit: mm
0.15 +0.02 -0.02
1. Gate 2. Source 3. Drain
■ Absolute Maximum Ratings Ta = 25℃
Parameter Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current @ VGS=10V
Pulsed Drain Current
Power Dissipation
TA=25℃ TA=70℃
TA=25℃ TA=70℃
Thermal Resistance.Junction- to-Ambient (Note.1)
Linear Derating Factor Junction Temperature S.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRLML0100PBF-1 |
International Rectifier |
Power MOSFET | |
2 | IRLML0100TRPBF |
International Rectifier |
HEXFET Power MOSFET | |
3 | IRLML0030PBF-1 |
International Rectifier |
Power MOSFET | |
4 | IRLML0030TRPBF |
International Rectifier |
HEXFET Power MOSFET | |
5 | IRLML0040TRPBF |
International Rectifier |
HEXFET Power MOSFET | |
6 | IRLML0060 |
Kexin |
N-Channel MOSFET | |
7 | IRLML0060TRPbF |
Infineon |
Power MOSFET | |
8 | IRLML0060TRPBF |
International Rectifier |
HEXFET Power MOSFET | |
9 | IRLML2030TRPBF |
International Rectifier |
HEXFET Power MOSFET | |
10 | IRLML2060TRPBF |
International Rectifier |
HEXFET Power MOSFET | |
11 | IRLML2244TRPbF |
International Rectifier |
HEXFET Power MOSFET | |
12 | IRLML2246PBF-1 |
International Rectifier |
Power MOSFET |