SMD Type ■ Features ● VDS (V) = 60V ● RDS(ON) < 92mΩ (VGS = 10V) ● RDS(ON) < 116mΩ (VGS = 4.5V) TraMnOsiSsFtoErsT N-Channel MOSFET IRLML0060 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 Unit: mm +0.11.3 -0.1 0.55 0.4 +0.12.4 -0.1 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 0.1 +0.05 -0.01 +0.10.97 -0.1 1. Gate 2. Source 3. Drain 0-0.1 +0.10.38 -0.1 ■ Absolute Maxi.
● VDS (V) = 60V
● RDS(ON) < 92mΩ (VGS = 10V)
● RDS(ON) < 116mΩ (VGS = 4.5V)
TraMnOsiSsFtoErsT
N-Channel MOSFET IRLML0060
SOT-23
2.9 +0.1 -0.1
0.4 +0.1 -0.1
3
Unit: mm
+0.11.3 -0.1
0.55 0.4
+0.12.4 -0.1
12
0.95 +0.1 -0.1 1.9 +0.1 -0.1
0.1 +0.05 -0.01
+0.10.97 -0.1
1. Gate 2. Source 3. Drain
0-0.1 +0.10.38
-0.1
■ Absolute Maximum Ratings Ta = 25℃
Drain-Source Voltage Gate-Source Voltage
Parameter
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Thermal Resistance. Junction- to-Ambient
*1 Thermal Resistance. Junction- to-Ambient (t<10s) Junction Temperature Stor.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRLML0060TRPbF |
Infineon |
Power MOSFET | |
2 | IRLML0060TRPBF |
International Rectifier |
HEXFET Power MOSFET | |
3 | IRLML0030PBF-1 |
International Rectifier |
Power MOSFET | |
4 | IRLML0030TRPBF |
International Rectifier |
HEXFET Power MOSFET | |
5 | IRLML0040TRPBF |
International Rectifier |
HEXFET Power MOSFET | |
6 | IRLML0100 |
Kexin |
N-Channel MOSFET | |
7 | IRLML0100PBF-1 |
International Rectifier |
Power MOSFET | |
8 | IRLML0100TRPBF |
International Rectifier |
HEXFET Power MOSFET | |
9 | IRLML2030TRPBF |
International Rectifier |
HEXFET Power MOSFET | |
10 | IRLML2060TRPBF |
International Rectifier |
HEXFET Power MOSFET | |
11 | IRLML2244TRPbF |
International Rectifier |
HEXFET Power MOSFET | |
12 | IRLML2246PBF-1 |
International Rectifier |
Power MOSFET |