Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. TO-247AC Absolute Maximum Ratings .
• Switching-loss rating includes all "tail" losses
• Optimized for line frequency operation (to 400Hz) See Fig. 1 for Current vs. Frequency curve
G E C
Standard Speed IGBT
VCES = 600V VCE(sat) ≤ 1.6V
@VGE = 15V, IC = 41A
n-channel
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications.
TO-247AC
Absolute Maximum Ra.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRGPC50F |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR | |
2 | IRGPC50FD2 |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR | |
3 | IRGPC50M |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR | |
4 | IRGPC50MD2 |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR | |
5 | IRGPC50UD2 |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR | |
6 | IRGPC20F |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR | |
7 | IRGPC20K |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
8 | IRGPC20M |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR | |
9 | IRGPC20MD2 |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR | |
10 | IRGPC20U |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR | |
11 | IRGPC30F |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR | |
12 | IRGPC30FD2 |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR |