IRFZ45 N-Channel MOSFET Datasheet

IRFZ45 N-Channel MOSFET

isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 35mΩ ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converter ·Ideal for high-frequency switching and synchronous rectification ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMB.

Features

·Static drain-source on-resistance: RDS(on) ≤ 35mΩ
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·APPLICATION
·DC/DC Converter
·Ideal for high-frequency switching and synchronous rectification
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 35 IDM Drain Current-Single Pulsed 140 PD Total Dissipation @TC=25℃ 150 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V .

The same part from a different manufacturer

IRFZ45 - Samsung Electronics

IRFZ45 - ART CHIP

IRFZ44/45/40/42 N-CHANNEL POWER MOSFETS FEATURES Lower RDS(ON) Improved inductive ruggedness Fast switching times Rugge.

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IRFZ45 - INCHANGE