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T SGS-THOMSON ^ 7 #« [^DWi[L[i(gTOR!]D(gi IRFZ40 IRFZ42 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRFZ40 IRFZ42 V Dss 50 V 50 V ^DS(on) 0.028 fi 0.035 n •d 35 A 35 A • VERY LOW Rds (on) • LOW DRIVE ENERGY FOR EASY DRIVE • HIGH TRANSCONDUCTANCE /Crss RATIO INDUSTRIAL APPLICATIONS: • AUTOMOTIVE POWER ACTUATORS • MOTOR CONTROLS • INVERTERS .
t.) at Tc = 100°C Drain current (pulsed) Drain inductive current, clamped (L= 100
*iH) Total dissipation at Tc < 25°C Derating factor
Ttg
Storage temperature
Ti
Max. operating junction temperature
• Tl = 2 5 °C to 125°C (
*) Repetitive Rating: Pulse width limited by max junction temperature
June 1988
IRFZ40
IRFZ42
50
V
50
V
±20
V
35
35
A
32
29
A
160
145
A
160
145
A
125
W
1.2
W /°C
- 5 5 to 150
°C
150
°C
16
IRFZ40 - IRFZ42
THERMAL DATA
R
Thermal resistance junction-case
Thermal resistance case-sink
Thermal resistance junction-ambient
T,
Maximum lead tem.
IRFZ42 - ART CHIP
IRFZ44/45/40/42 N-CHANNEL POWER MOSFETS FEATURES Lower RDS(ON) Improved inductive ruggedness Fast switching times Rugge.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRFZ40 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 2 | IRFZ40 |
Samsung Electronics |
N-Channel Power MOSFETS |
|
| 3 | IRFZ40 |
Motorola Semiconductor |
Power Field Effect Transistors |
|
| 4 | IRFZ40 |
STMicroelectronics |
N-Channel Power MOS Transistors |
|
| 5 | IRFZ40 |
Vishay |
Power MOSFET |
|
| 6 | IRFZ40 |
ART CHIP |
N-CHANNEL POWER MOSFETS |
|
| 7 | IRFZ40FI |
STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
|
| 8 | IRFZ40FI |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 9 | IRFZ44 |
International Rectifier |
Power MOSFET |
|
| 10 | IRFZ44 |
Fairchild |
Power MOSFET |
|
| 11 | IRFZ44 |
Vishay |
Power MOSFET |
|
| 12 | IRFZ44 |
Thinki Semiconductor |
N-Channel Trench Power MOSFETs |
|
