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IRFZ44 - Thinki Semiconductor

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IRFZ44 N-Channel Trench Power MOSFETs

The IRFZ44 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM. Features ● VDS=60V;ID=45A@ VGS=10V; RDS(ON)<7.5mΩ @ VGS=10V ● Ultra Low On-Resistance ● High UIS and UIS 100% Test Application ● Hard Switched and High Frequency Circuits ● Uninterruptible Powe.

Features


● VDS=60V;ID=45A@ VGS=10V; RDS(ON)<7.5mΩ @ VGS=10V
● Ultra Low On-Resistance
● High UIS and UIS 100% Test Application
● Hard Switched and High Frequency Circuits
● Uninterruptible Power Supply G DS TO-251 Top View Schematic Diagram VDSS = 60 V IDSS = 45 A RDS(ON) = 6.0 mΩ Table 1. Absolute Maximum Ratings (TA=25℃) Symbol Parameter VDS Drain-Source Voltage (VGS=0V) VGS Gate-Source Voltage (VDS=0V) ID (DC) Drain Current (DC) at Tc=25℃ ID (DC) IDM (pluse) Drain Current (DC) at Tc=100℃ Drain Current-Continuous@ Current-Pulsed (Note 1) dv/dt Peak Diode Recovery Voltage PD EAS TJ,TSTG.

The same part from a different manufacturer

Datasheet IRFZ44 - Vishay IRFZ44

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized .

Datasheet IRFZ44 - International Rectifier IRFZ44

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Datasheet IRFZ44 - Fairchild IRFZ44

$GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ .

Datasheet IRFZ44 - ART CHIP IRFZ44

IRFZ44/45/40/42 N-CHANNEL POWER MOSFETS FEATURES Lower RDS(ON) Improved inductive ruggedness Fast switching times Rugge.

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