$GYDQFHG 3RZHU 026)(7 IRFW740S FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V ♦ Lower RDS(ON): 0.437Ω (Typ.) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteris.
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V ♦ Lower RDS(ON): 0.437Ω (Typ.) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Drain Current-Pulsed (1) Gate-to-Source Voltage Single Pulsed Avalanche Energy (2) Avalanche Current (1) Repetitive Avalanche Energy (1) Peak Diode Recovery dv/dt Total P.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRFW740A |
Fairchild Semiconductor |
Advanced Power MOSFET | |
2 | IRFW740B |
Fairchild Semiconductor |
400V N-Channel MOSFET | |
3 | IRFW710A |
Fairchild Semiconductor |
Power MOSFET | |
4 | IRFW710B |
Fairchild Semiconductor |
400V N-Channel MOSFET | |
5 | IRFW710S |
Fairchild Semiconductor |
Power MOSFET | |
6 | IRFW720A |
Samsung |
Power MOSFET | |
7 | IRFW720B |
Fairchild Semiconductor |
400V N-Channel MOSFET | |
8 | IRFW720S |
Fairchild Semiconductor |
Power MOSFET | |
9 | IRFW730A |
Samsung |
Power MOSFET | |
10 | IRFW730B |
Fairchild Semiconductor |
400V N-Channel MOSFET | |
11 | IRFW730S |
Fairchild Semiconductor |
Power MOSFET | |
12 | IRFW450 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |