These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited.
• 2.0A, 400V, RDS(on) = 3.4Ω @VGS = 10 V
• Low gate charge ( typical 7.7 nC)
• Low Crss ( typical 6.0 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
GS
D2-PAK
IRFW Series
GDS
I2-PAK
IRFI Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, Tstg TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRFW710A |
Fairchild Semiconductor |
Power MOSFET | |
2 | IRFW710S |
Fairchild Semiconductor |
Power MOSFET | |
3 | IRFW720A |
Samsung |
Power MOSFET | |
4 | IRFW720B |
Fairchild Semiconductor |
400V N-Channel MOSFET | |
5 | IRFW720S |
Fairchild Semiconductor |
Power MOSFET | |
6 | IRFW730A |
Samsung |
Power MOSFET | |
7 | IRFW730B |
Fairchild Semiconductor |
400V N-Channel MOSFET | |
8 | IRFW730S |
Fairchild Semiconductor |
Power MOSFET | |
9 | IRFW740A |
Fairchild Semiconductor |
Advanced Power MOSFET | |
10 | IRFW740B |
Fairchild Semiconductor |
400V N-Channel MOSFET | |
11 | IRFW740S |
Fairchild Semiconductor |
Power MOSFET | |
12 | IRFW450 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |