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Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized .
iscN-Channel MOSFET Transistor IRFUC20 ·FEATURES ·Low drain-source on-resistance: RDS(ON) =4.4Ω (MAX) ·Enhancement mod.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRFUC20PBF |
International Rectifier |
HEXFET Power MOSFET | |
2 | IRFU010 |
International Rectifier |
Transistor | |
3 | IRFU012 |
International Rectifier |
Transistor | |
4 | IRFU014 |
INCHANGE |
N-Channel MOSFET | |
5 | IRFU014 |
International Rectifier |
Power MOSFET | |
6 | IRFU014 |
Vishay Siliconix |
Power MOSFET | |
7 | IRFU014A |
Fairchild Semiconductor |
ADVANCED POWER MOSFET | |
8 | IRFU014PBF |
International Rectifier |
HEXFET Power MOSFET | |
9 | IRFU020 |
Vishay Siliconix |
(IRFR020 / IRFU020) Power MOSFET | |
10 | IRFU024 |
International Rectifier |
HEXFET POWER MOSFET | |
11 | IRFU024 |
Vishay Siliconix |
Power MOSFET | |
12 | IRFU024A |
Samsung |
Power MOSFET |