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IRFUC20 |
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| Part Number | IRFUC20 |
| Manufacturer | INCHANGE |
| Description | iscN-Channel MOSFET Transistor IRFUC20 ·FEATURES ·Low drain-source on-resistance: RDS(ON) =4.4Ω (MAX) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot... |
| Features |
·Low drain-source on-resistance: RDS(ON) =4.4Ω (MAX) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 2.0 A IDM Drain Current-Single Pulsed 8.0 A PD Total Dissipation @TC=25℃ 42 W Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -... |
| Document |
 IRFUC20 Data Sheet
PDF 291.81KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRFUC20 |
International Rectifier |
(IRFRC20 / IRFUC20) Power MOSFET |
|
| 2 | IRFUC20 |
Vishay Siliconix |
Power MOSFET |
|
| 3 | IRFUC20PBF |
International Rectifier |
HEXFET Power MOSFET |
|
| 4 | IRFU010 |
International Rectifier |
Transistor |
|
| 5 | IRFU012 |
International Rectifier |
Transistor |
|