IRFP4668PBF - International Rectifier

IRFP4668PBF HEXFET Power MOSFET

PD -97140 IRFP4668PbF HEXFET® Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt .

Features

V/ns °C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C www.DataSheet4U.com Avalanche Characteristics EAS (Thermally limited) IAR EAR Single Pulse Avalanche Energy d Avalanche Current c Repetitive Avalanche Energy f mJ A mJ Thermal Resistance Symbol RθJC RθCS RθJA Parameter Junction-to-Case j Case-to-Sink, Flat Greased Surface Junction-to-Ambient ij Typ.
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  – 0.24
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  – Max. 0.29
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  – 40 Units °C/W www.irf.com 1 9/8/08 IRFP4668PbF Static @ TJ = 25°C (unless otherwise specified) Symbol V(BR)DSS ΔV(BR)DSS/ΔTJ RDS(on) VGS(th) IDSS IGSS RG Parameter Drain-to-Source Breakdown Voltage Bre.