Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
isc N-Channel MOSFET Transistor IRFP4668，IIRFP4668 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤9.7mΩ ·Enhancement mode: Vth =3.0 to 5.0 V (VDS=VGS, ID=250μA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Efficiency Synchronous Rectification in SMPS ·Uninterruptible Po.
·Static drain-source on-resistance:
RDS(on)≤9.7mΩ
·Enhancement mode:
Vth =3.0 to 5.0 V (VDS=VGS, ID=250μA)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·High Efficiency Synchronous Rectification in SMPS
·Uninterruptible Power Supply
·High Speed Power Switching
·Hard Switched And High Frequency Circuits
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
200
VGS
Gate-Source Voltage
±30
ID
Drain Current-Continuous
130
IDM
Drain Current-Single Pulsed
520
PD
Total Dissipation.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRFP4668PBF |
International Rectifier |
HEXFET Power MOSFET |
|
| 2 | IRFP460 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 3 | IRFP460 |
Fairchild Semiconductor |
Power MOSFET |
|
| 4 | IRFP460 |
International Rectifier |
Power MOSFET |
|
| 5 | IRFP460 |
Intersil Corporation |
N-Channel Power MOSFET |
|
| 6 | IRFP460 |
ST Microelectronics |
N-Channel Power MOSFET |
|
| 7 | IRFP460 |
NXP |
PowerMOS transistor |
|
| 8 | IRFP460 |
Vishay |
Power MOSFET |
|
| 9 | IRFP460A |
International Rectifier |
Power MOSFET |
|
| 10 | IRFP460A |
Vishay Siliconix |
Power MOSFET |
|
| 11 | IRFP460A |
INCHANGE |
N-Channel MOSFET |
|
| 12 | IRFP460APBF |
International Rectifier |
Power MOSFET |
|