·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 200 ±20 V V ID Drain Current-Continuous 12 A IDM Drain Current-Single Pluse 48 A PD Total Dissipation @TC=25℃ 55 W TJ Max. Operating Junctio.
·Drain Current
–ID= 12A@ TC=25℃
·Drain Source Voltage-
: VDSS= 200V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.18Ω(Max)
·Fast Switching
DESCRIPTION
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS VGS
Drain-Source Voltage Gate-Source Voltage-Continuous
200 ±20
V V
ID Drain Current-Continuous
12 A
IDM Drain Current-Single Pluse
48 A
PD Total Dissipation @TC=25℃
55 W
TJ
Max. Operating Junction Temperature
-55~150 ℃
Tstg Storage Temperature
-55~150 ℃
THERMAL CHARACTER.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRFP240 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
2 | IRFP240 |
International Rectifier |
Power MOSFET | |
3 | IRFP240 |
Intersil Corporation |
N-Channel Power MOSFET | |
4 | IRFP240 |
Fairchild Semiconductor |
N-Channel Power MOSFET | |
5 | IRFP240 |
Vishay Siliconix |
Power MOSFET | |
6 | IRFP240A |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
7 | IRFP240A |
Samsung |
Power MOSFET | |
8 | IRFP240B |
Fairchild Semiconductor |
N-Channel MOSFET | |
9 | IRFP240PbF |
Vishay Siliconix |
Power MOSFET | |
10 | IRFP240PBF |
International Rectifier |
Power MOSFET | |
11 | IRFP240R |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
12 | IRFP2410 |
International Rectifier |
Fourth Generation MOSFET |