isc N-Channel MOSFET Transistor IRFP064N,IIRFP064N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤8mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Ultra Low On-resistance ·Fast Switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS D.
·Static drain-source on-resistance:
RDS(on)≤8mΩ
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Ultra Low On-resistance
·Fast Switching
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
55
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
110
IDM
Drain Current-Single Pulsed
390
PD
Total Dissipation @TC=25℃
200
Tj
Max. Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
P.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRFP064 |
Power MOSFET |
Power MOSFET | |
2 | IRFP064 |
Vishay |
Power MOSFET | |
3 | IRFP064 |
INCHANGE |
N-Channel MOSFET | |
4 | IRFP064NPBF |
International Rectifier |
Power MOSFET | |
5 | IRFP064V |
Power MOSFET |
Power MOSFET | |
6 | IRFP064VPBF |
International Rectifier |
HEXFET Power MOSFET | |
7 | IRFP040 |
International Rectifier |
(IRFP040 / IRFP042) N-Channel Power MOSFET | |
8 | IRFP042 |
International Rectifier |
(IRFP040 / IRFP042) N-Channel Power MOSFET | |
9 | IRFP044 |
Power MOSFET |
Power MOSFET | |
10 | IRFP044 |
Vishay |
Power MOSFET | |
11 | IRFP044N |
Power MOSFET |
Power MOSFET | |
12 | IRFP044N |
INCHANGE |
N-Channel MOSFET |