Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a.
urrent, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy
Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt
Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw
Max.
53 37 180 120 0.77 ± 20 230 28 12 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf
•in (1.1N
•m)
Units
A W W/°C V mJ A mJ V/ns °C
Thermal Resistance
Parameter
RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surf.
isc N-Channel MOSFET Transistor IRFP044N,IIRFP044N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤20mΩ ·Enhance.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRFP044 |
Power MOSFET |
Power MOSFET | |
2 | IRFP044 |
Vishay |
Power MOSFET | |
3 | IRFP044NPbF |
International Rectifier |
Power MOSFET | |
4 | IRFP044PbF |
International Rectifier |
Power MOSFET | |
5 | IRFP040 |
International Rectifier |
(IRFP040 / IRFP042) N-Channel Power MOSFET | |
6 | IRFP042 |
International Rectifier |
(IRFP040 / IRFP042) N-Channel Power MOSFET | |
7 | IRFP048 |
Power MOSFET |
Power MOSFET | |
8 | IRFP048 |
Vishay |
Power MOSFET | |
9 | IRFP048 |
INCHANGE |
N-Channel MOSFET | |
10 | IRFP048N |
Power MOSFET |
Power MOSFET | |
11 | IRFP048N |
INCHANGE |
N-Channel MOSFET | |
12 | IRFP048NPbF |
International Rectifier |
Power MOSFET |