Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the ea.
• Dynamic dV/dt Rating
• Isolated Central Mounting Hole
• 175 °C Operating Temperature
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
Available
RoHS
*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package b.
iscN-Channel MOSFET Transistor IRFP048 ·FEATURES ·Low drain-source on-resistance: RDS(ON) ≤18mΩ @VGS=10V ·Enhancement .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRFP040 |
International Rectifier |
(IRFP040 / IRFP042) N-Channel Power MOSFET | |
2 | IRFP042 |
International Rectifier |
(IRFP040 / IRFP042) N-Channel Power MOSFET | |
3 | IRFP044 |
Power MOSFET |
Power MOSFET | |
4 | IRFP044 |
Vishay |
Power MOSFET | |
5 | IRFP044N |
Power MOSFET |
Power MOSFET | |
6 | IRFP044N |
INCHANGE |
N-Channel MOSFET | |
7 | IRFP044NPbF |
International Rectifier |
Power MOSFET | |
8 | IRFP044PbF |
International Rectifier |
Power MOSFET | |
9 | IRFP048N |
Power MOSFET |
Power MOSFET | |
10 | IRFP048N |
INCHANGE |
N-Channel MOSFET | |
11 | IRFP048NPbF |
International Rectifier |
Power MOSFET | |
12 | IRFP048PbF |
International Rectifier |
Power MOSFET |