Applications l Brushed Motor drive applications l BLDC Motor drive applications l PWM Inverterized topologies l Battery powered circuits l Half-bridge and full-bridge topologies l Electronic ballast applications l Synchronous rectifier applications l Resonant mode power supplies l OR-ing and redundant power switches l DC/DC and AC/DC converters Benefits l Im.
ID, Drain Current (A) 6.0 ID = 50A 5.0 4.0 TJ = 125°C 3.0 2.0 TJ = 25°C 1.0 4 6 8 10 12 14 16 18 20 VGS, Gate -to -Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate Voltage 1 www.irf.com © 2015 International Rectifier 200 150 Limited By Package 100 50 0 25 50 75 100 125 TC , Case Temperature (°C) 150 Fig 2. Maximum Drain Current vs. Case Temperature Submit Datasheet Feedback July 7, 2015 IRFH7440PbF Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Dr.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRFH7446PBF |
International Rectifier |
HEXFET Power MOSFET | |
2 | IRFH7446TRPBF |
International Rectifier |
HEXFET Power MOSFET | |
3 | IRFH7004PBF |
International Rectifier |
HEXFET Power MOSFET | |
4 | IRFH7004TRPBF |
International Rectifier |
HEXFET Power MOSFET | |
5 | IRFH7084PbF |
International Rectifier |
HEXFET Power MOSFET | |
6 | IRFH7084TRPbF |
International Rectifier |
HEXFET Power MOSFET | |
7 | IRFH7085PBF |
International Rectifier |
Power MOSFET | |
8 | IRFH7107PBF |
International Rectifier |
HEXFET Power MOSFET | |
9 | IRFH7107TRPBF |
International Rectifier |
HEXFET Power MOSFET | |
10 | IRFH7110PBF |
International Rectifier |
HEXFET Power MOSFET | |
11 | IRFH7110TRPBF |
International Rectifier |
HEXFET Power MOSFET | |
12 | IRFH7182PBF |
International Rectifier |
Power MOSFET |