IRFE230 MECHANICAL DATA Dimensions in mm (inches) N–CHANNEL POWER MOSFET ≈ 2.16 (0.085) 1.27 (0.050) 1.07 (0.040) 9.14 (0.360) 8.64 (0.340) 12 13 14 15 16 1.39 (0.055) 1.02 (0.040) 11 7.62 (0.300) 7.12 (0.280) 17 18 1 2 0.76 (0.030) 0.51 (0.020) 10 9 8 VDSS ID(cont) RDS(on) FEATURES • SURFACE MOUNT • SMALL FOOTPRINT 200V 4.8A 0.46Ω 7 6 5 4 3 1.
• SURFACE MOUNT
• SMALL FOOTPRINT
200V 4.8A 0.46Ω
7
6
5
4
3
1.65 (0.065) 1.40 (0.055)
0.33 (0.013) Rad. 0.08 (0.003)
1.39 (0.055) 1.15 (0.045)
0.43 (0.017) 0.18 (0.007 Rad.
• HERMETICALLY SEALED
• DYNAMIC dv/dt RATING LCC4 MOSFET
GATE DRAIN SOURCE
• AVALANCHE ENERGY RATING PINS
4,5 1,2,15,16,17,18 6,7,8,9,10,11,12,13
TRANSISTOR
BASE COLLECTOR EMITTER
• SIMPLE DRIVE REQUIREMENTS
• LIGHT WEIGHT
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VGS ID ID IDM PD EAS dv/dt TJ , Tstg Gate
– Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Curr.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRFE220 |
International Rectifier |
N-Channel Power MOSFET | |
2 | IRFE024 |
Seme LAB |
N-Channel Power MOSFET | |
3 | IRFE110 |
Seme LAB |
N-CHANNEL POWER MOSFET | |
4 | IRFE130 |
Seme LAB |
N-Channel Power MOSFET | |
5 | IRFE310 |
International Rectifier |
HEXFET TRANSISTOR | |
6 | IRFE320 |
International Rectifier |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS SURFACE MOUNT | |
7 | IRFE330 |
International Rectifier |
REPETITIVE AVALANCHE AND dv/dt RATED | |
8 | IRFE420 |
International Rectifier |
N-Channel Power MOSFET | |
9 | IRFE9110 |
Seme LAB |
P-Channel Power MOSFET | |
10 | IRFE9120 |
Seme LAB |
P-CHANNEL POWER MOSFET | |
11 | IRFE9130 |
Seme LAB |
P-Channel Power MOSFET | |
12 | IRFE9130 |
International Rectifier |
100V P-CHANNEL MOSFET |