IRFE110 - Seme LAB

IRFE110 N-CHANNEL POWER MOSFET

2N6782LCC4 IRFE110 MECHANICAL DATA Dimensions in mm (inches) N–CHANNEL POWER MOSFET 1.27 (0.050) 1.07 (0.040) 11 7.62 (0.300) 10 7.12 (0.280) 9 8 9.14 (0.360) 8.64 (0.340) 12 13 14 15 16 1.39 (0.055) 1.02 (0.040) 17 18 1 2 0.76 (0.030) 0.51 (0.020) 76543 1.39 (0.055) 1.15 (0.045) 1.65 (0.065) 1.40 (0.055) 0.33 0.08 (0.013) (0.003) Rad. .

Features

• SURFACE MOUNT
• SMALL FOOTPRINT
• HERMETICALLY SEALED
• DYNAMIC dv/dt RATING
• AVALANCHE ENERGY RATING
• SIMPLE DRIVE REQUIREMENTS
• LIGHTWEIGHT ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VGS Gate
  – Source Voltage ±20V ID Continuous Drain Current (VGS = 10V , Tcase = 25°C) 3.5A ID Continuous Drain Current (VGS = 10V , Tcase = 100°C) 2.25A IDM Pulsed Drain Current 1 14A PD Power Dissipation @ Tcase = 25°C 15W Linear Derating Factor 0.09W/°C EAS dv/dt Single Pulse Avalanche Energy 2 Peak Diode Recovery 3 7.0mJ 9.0V/ns TJ , Tstg Operating and Storag.