Features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications. D G D S G D S D2Pak IRF9540NSPbF G D TO-262 IRF9540NLPbF S Absolute Maximum Ratings .
of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications. D G D S G D S D2Pak IRF9540NSPbF G D TO-262 IRF9540NLPbF S Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Gate Drain Max. -23 -14 -92 3.1 110 0.9 ± 20 84 -.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRF9540NS |
International Rectifier |
Power MOSFET | |
2 | IRF9540NS |
INCHANGE |
P-Channel MOSFET | |
3 | IRF9540N |
International Rectifier |
Power MOSFET | |
4 | IRF9540N |
INCHANGE |
P-Channel MOSFET | |
5 | IRF9540NL |
International Rectifier |
Power MOSFET | |
6 | IRF9540NL |
INCHANGE |
P-Channel MOSFET | |
7 | IRF9540NLPBF |
International Rectifier |
HEXFET POWER MOSFET | |
8 | IRF9540NPBF |
International Rectifier |
Power MOSFET | |
9 | IRF9540 |
Intersil Corporation |
P-Channel Power MOSFET | |
10 | IRF9540 |
International Rectifier |
Power MOSFET | |
11 | IRF9540 |
Harris Corporation |
P-Channel MOSFET | |
12 | IRF9540 |
Fairchild Semiconductor |
P-Channel Power MOSFETs |