IRF9540 - Intersil Corporation

IRF9540 P-Channel Power MOSFET

IRF9540, RF1S9540SM Data Sheet July 1999 File Number 2282.6 19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MO.

Features

• 19A, 100V
• rDS(ON) = 0.200Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER IRF9540 RF1S9540SM PACKAGE TO-220AB TO-263AB BRAND IRF9540 RF1S9540 Symbol D G NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in the tape and reel, i.e., RF1S9540SM9A. S Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANG.