IRF7309 - International Rectifier

IRF7309 HEXFET Power MOSFET

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design for which HEXFET Power MOSFETs are well known, provides the designer with an extremely efficient device for use in a wide .

Features

issipation of greater than 0.8W is possible in a typical PCB mount application. S1 G1 S2 G2 D1 D1 N-Ch VDSS 30V P-Ch -30V 2 7 3 6 D2 D2 4 5 P-CHANNEL MOSFET RDS(on) 0.050Ω 0.10Ω Top View SO-8 Absolute Maximum Ratings Parameter N-Channel ID @ TA = 25°C ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ, TSTG 10 Sec. Pulse Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation (PCB Mount)
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* Linear Derating Factor (PCB Mount)
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* Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and St.