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Top View Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use .
igned for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. SO-8 www.DataSheet4U.com Absolute Maximum Ratings Parameter I D @ TA = 25°C ID @ TA = 25°C I D @ TA = 70°C I DM PD @TA = 25°C VGS dv/dt TJ, TSTG 10 Sec. Pulsed Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range Max. 5.7 5.2 4.1 21 2.0 0.016 ±.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRF7301 |
International Rectifier |
Power MOSFET |
|
| 2 | IRF730 |
NXP |
PowerMOS transistor |
|
| 3 | IRF730 |
STMicroelectronics |
N-Channel Power MOSFET |
|
| 4 | IRF730 |
Intersil Corporation |
N-Channel Power MOSFET |
|
| 5 | IRF730 |
Fairchild Semiconductor |
N-Channel Power MOSFET |
|
| 6 | IRF730 |
NTE |
N-Channel MOSFET |
|
| 7 | IRF730 |
Vishay |
Power MOSFET |
|
| 8 | IRF730 |
nELL |
N-Channel Power MOSFET |
|
| 9 | IRF730 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 10 | IRF730 |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 11 | IRF7303 |
International Rectifier |
Power MOSFET |
|
| 12 | IRF7303PbF |
International Rectifier |
Power MOSFET |
|