IRF634NLPbF - International Rectifier

IRF634NLPbF HEXFET Power MOSFET

l l Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable d.

Features

pability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF634NL) is available for lowprofile application. IRF634NPbF IRF634NSPbF IRF634NLPbF HEXFET® Power MOSFET D VDSS = 250V RDS(on) = 0.435Ω G S ID = 8.0A www.DataSheet4U.com TO-220AB IRF634N D2Pak IRF634NS TO-262 IRF634NL Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @.