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l l Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable d.
the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF634NL) is available for lowprofile application. IRF634N IRF634NS IRF634NL HEXFET® Power MOSFET D VDSS = 250V RDS(on) = 0.435Ω G S ID = 8.0A TO-220AB IRF634N D2Pak IRF634NS TO-262 IRF634NL Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TA = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Co.
IRF634N - Vishay
Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRF634 |
STMicroelectronics |
N-CHANNEL Power MOSFET |
|
| 2 | IRF634 |
International Rectifier |
Power MOSFET |
|
| 3 | IRF634 |
Fairchild Semiconductor |
Advanced Power MOSFET |
|
| 4 | IRF634 |
Vishay |
Power MOSFET |
|
| 5 | IRF634 |
BLUE ROCKET ELECTRONICS |
N-CHANNEL MOSFET |
|
| 6 | IRF634 |
Inchange Semiconductor |
N-channel mosfet transistor |
|
| 7 | IRF634A |
Fairchild Semiconductor |
Advanced Power MOSFET |
|
| 8 | IRF634A |
Samsung |
Advanced Power MOSFET |
|
| 9 | IRF634A |
ART CHIP |
Advanced Power MOSFET |
|
| 10 | IRF634B |
Fairchild Semiconductor |
N-Channel BFET MOSFET |
|
| 11 | IRF634FP |
STMicroelectronics |
N-CHANNEL Power MOSFET |
|
| 12 | IRF634NL |
International Rectifier |
Power MOSFET |
|