IRF634B - Fairchild Semiconductor

IRF634B N-Channel BFET MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited.

Features

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• 8.1A, 250V, RDS(on) = 0.45Ω @VGS = 10 V Low gate charge ( typical 29 nC) Low Crss ( typical 20 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G G DS TO-220 IRF Series GD S TO-220F IRFS Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) IRF634B 250 8.1 5.1 32.4 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) IRFS634B 8.1
* 5.1
* 32.4
* 200 8.1 7.4 5.5 Units V.