PD - 97500A IRF6201PbF VDS RDS(on) max (@VGS = 4.5V) 20 2.45 2.75 130 27 V mΩ mΩ nC A 6 6 6 * HEXFET® Power MOSFET ' ' ' ' RDS(on) max (@VGS = 2.5V) Qg (typical) ID (@TA = 25°C) SO-8 Applications • OR-ing or hot-swap MOSFET • Battery operated DC motor inverter MOSFET • System/Load switch Features and Benefits Features Low RDSon (≤ 2..
Features Low RDSon (≤ 2.45mΩ @ Vgs = 4.5V) Industry-standard SO-8 package RoHS compliant containing no lead, no bromide and no halogen Benefits Lower conduction losses results in Multi-vendor compatibility ⇒ Environmentally Friendly Orderable part number IRF6201PbF IRF6201TRPbF Package Type SO8 SO8 Standard Pack Form Quantity Tube/Bulk 95 4000 Tape and Reel Note Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRF620 |
Inchange Semiconductor |
N-Channel Mosfet Transistor | |
2 | IRF620 |
STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | |
3 | IRF620 |
Intersil Corporation |
N-Channel Power MOSFET | |
4 | IRF620 |
Fairchild Semiconductor |
N-Channel Power MOSFET | |
5 | IRF620 |
TRANSYS Electronics |
Power MOSFET | |
6 | IRF620 |
Vishay |
Power MOSFET | |
7 | IRF620A |
Inchange Semiconductor |
N-Channel Mosfet Transistor | |
8 | IRF620A |
Fairchild Semiconductor |
Power MOSFET | |
9 | IRF620B |
Fairchild Semiconductor |
200V N-Channel MOSFET | |
10 | IRF620FI |
Inchange Semiconductor |
N-Channel Mosfet Transistor | |
11 | IRF620FI |
STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | |
12 | IRF620PBF |
International Rectifier |
HEXFET Power MOSFET |