Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in an.
200 0.80
• Halogen-free According to IEC 61249-2-21 Definition
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Simple Drive Requirements
• Ease of Paralleling
• Compliant to RoHS Directive 2002/95/EC
D2PAK
(TO-263)
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It provides the highest p.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRF620 |
Inchange Semiconductor |
N-Channel Mosfet Transistor | |
2 | IRF620 |
STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | |
3 | IRF620 |
Intersil Corporation |
N-Channel Power MOSFET | |
4 | IRF620 |
Fairchild Semiconductor |
N-Channel Power MOSFET | |
5 | IRF620 |
TRANSYS Electronics |
Power MOSFET | |
6 | IRF620 |
Vishay |
Power MOSFET | |
7 | IRF6201PBF |
International Rectifier |
Power MOSFET | |
8 | IRF620A |
Inchange Semiconductor |
N-Channel Mosfet Transistor | |
9 | IRF620A |
Fairchild Semiconductor |
Power MOSFET | |
10 | IRF620B |
Fairchild Semiconductor |
200V N-Channel MOSFET | |
11 | IRF620FI |
Inchange Semiconductor |
N-Channel Mosfet Transistor | |
12 | IRF620FI |
STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |