IRF3205STRLPBF - INCHANGE

IRF3205STRLPBF N-Channel MOSFET

·Drain Current ID=110A@ TC=25℃ ·Drain Source Voltage : VDSS= 55V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS . ·Designed for high current, high speed switching, switch mode power supplies. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Vol.

Features

SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 250µA VGS(th) Gate Threshold Voltage VDS= VGS; ID=250µA RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current VGS= 10V; ID=62A VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=55V; VGS= 0 VSD Diode Forward On-Voltage IS=62A ;VGS= 0 MIN TYPE MAX UNIT 55 V 2.0 4.0 V 8 mΩ ±100 nA 25 µA 1.3 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a gui.