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Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for us.
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRF3205 |
Thinki Semiconductor |
N-Channel Trench Process Power MOSFET Transistor |
|
| 2 | IRF3205 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 3 | IRF3205 |
International Rectifier |
Power MOSFET |
|
| 4 | IRF3205 |
nELL |
N-Channel Power MOSFET |
|
| 5 | IRF3205A |
nELL |
N-Channel Power MOSFET |
|
| 6 | IRF3205H |
nELL |
N-Channel Power MOSFET |
|
| 7 | IRF3205L |
International Rectifier |
N-Channel Power MOSFET |
|
| 8 | IRF3205LPBF |
International Rectifier |
Power MOSFET |
|
| 9 | IRF3205S |
International Rectifier |
Power MOSFET |
|
| 10 | IRF3205S |
INCHANGE |
N-Channel MOSFET |
|
| 11 | IRF3205SPBF |
International Rectifier |
Power MOSFET |
|
| 12 | IRF3205STRLPBF |
INCHANGE |
N-Channel MOSFET |
|