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IRF320 - Harris
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designe.
IRF320 - Intersil Corporation
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designe.
IRF320 - Inchange Semiconductor
·Drain Current ID=3.3A@ TC=25℃ ·Drain Source Voltage : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) =1.8.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRF3205 |
Thinki Semiconductor |
N-Channel Trench Process Power MOSFET Transistor |
|
| 2 | IRF3205 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 3 | IRF3205 |
International Rectifier |
Power MOSFET |
|
| 4 | IRF3205 |
nELL |
N-Channel Power MOSFET |
|
| 5 | IRF3205A |
nELL |
N-Channel Power MOSFET |
|
| 6 | IRF3205H |
nELL |
N-Channel Power MOSFET |
|
| 7 | IRF3205L |
International Rectifier |
N-Channel Power MOSFET |
|
| 8 | IRF3205LPBF |
International Rectifier |
Power MOSFET |
|
| 9 | IRF3205PBF |
International Rectifier |
HEXFET Power MOSFET |
|
| 10 | IRF3205S |
International Rectifier |
Power MOSFET |
|
| 11 | IRF3205S |
INCHANGE |
N-Channel MOSFET |
|
| 12 | IRF3205SPBF |
International Rectifier |
Power MOSFET |
|
