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Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this desig.
l l l l l HEXFET® Power MOSFET D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax VDSS = 40V G S RDS(on) = 1.6mΩ ID = 160A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremel.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRF2804S-7PPbF |
International Rectifier |
Power MOSFET |
|
| 2 | IRF2804S |
International Rectifier |
HEXFET Power MOSFET |
|
| 3 | IRF2804S |
FreesCale Electronics |
HEXFET Power MOSFET |
|
| 4 | IRF2804S |
INCHANGE |
N-Channel MOSFET |
|
| 5 | IRF2804SPbF |
International Rectifier |
HEXFET Power MOSFET |
|
| 6 | IRF2804 |
International Rectifier |
HEXFET Power MOSFET |
|
| 7 | IRF2804 |
INCHANGE |
N-Channel MOSFET |
|
| 8 | IRF2804 |
FreesCale Electronics |
HEXFET Power MOSFET |
|
| 9 | IRF2804L |
International Rectifier |
HEXFET Power MOSFET |
|
| 10 | IRF2804L |
FreesCale Electronics |
HEXFET Power MOSFET |
|
| 11 | IRF2804LPbF |
International Rectifier |
HEXFET Power MOSFET |
|
| 12 | IRF2804PbF |
International Rectifier |
HEXFET Power MOSFET |
|