Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this desig.
l l l l l HEXFET® Power MOSFET D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax VDSS = 40V RDS(on) = 2.0mΩ G S Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficie.
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques t.
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF2804,IIRF2804 ·FEATURES ·Static drain-source on-resistance: .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRF2804L |
International Rectifier |
HEXFET Power MOSFET | |
2 | IRF2804L |
FreesCale Electronics |
HEXFET Power MOSFET | |
3 | IRF2804LPbF |
International Rectifier |
HEXFET Power MOSFET | |
4 | IRF2804PbF |
International Rectifier |
HEXFET Power MOSFET | |
5 | IRF2804S |
International Rectifier |
HEXFET Power MOSFET | |
6 | IRF2804S |
FreesCale Electronics |
HEXFET Power MOSFET | |
7 | IRF2804S |
INCHANGE |
N-Channel MOSFET | |
8 | IRF2804S-7P |
International Rectifier |
AUTOMOTIVE MOSFET | |
9 | IRF2804S-7PPbF |
International Rectifier |
Power MOSFET | |
10 | IRF2804SPbF |
International Rectifier |
HEXFET Power MOSFET | |
11 | IRF2805 |
INCHANGE |
N-Channel MOSFET | |
12 | IRF2805 |
International Rectifier |
AUTOMOTIVE MOSFET |