IRF240 Data Sheet March 1999 File Number 1584.3 18A, 200V, 0.180 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for .
• 18A, 200V
• rDS(ON) = 0.180Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards”
Ordering Information
PART NUMBER IRF240 PACKAGE TO-204AE BRAND IRF240
Symbol
D
NOTE: When ordering, include the entire part number.
G
S
Packaging
JEDEC TO-204AE TOP VIEW
DRAIN (FLANGE)
SOURCE (PIN 2) GATE (PIN 1)
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handlin.
·Drain Current ID=18A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.1.
www.DataSheet4U.com PD - 90370 REPETITIVE A V ALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Prod.
N-CHANNEL POWER MOSFET IRF240 • Low RDS(on) MOSFET Transistor In A Hermetic Metal Package • Designed For Switching, Pow.
IRF240 MECHANICAL DATA Dimensions in mm (inches) 40.01 (1.575) Max. 26.67 (1.050) Max. 4.47 (0.176) Rad. 2 Pls. N–CHA.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRF240SMD |
Seme LAB |
N-Channel Power MOSFET | |
2 | IRF241 |
Fairchild Semiconductor |
N-Channel Power MOSFET | |
3 | IRF241 |
Samsung semiconductor |
N-Channel Power MOSFET | |
4 | IRF241 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
5 | IRF242 |
Fairchild Semiconductor |
N-Channel Power MOSFET | |
6 | IRF242 |
Samsung semiconductor |
N-Channel Power MOSFET | |
7 | IRF242 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
8 | IRF243 |
Fairchild Semiconductor |
N-Channel Power MOSFET | |
9 | IRF243 |
Samsung semiconductor |
N-Channel Power MOSFET | |
10 | IRF243 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
11 | IRF244 |
Intersil Corporation |
N-Channel Power MOSFET | |
12 | IRF244 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |