IRF240 |
Part Number | IRF240 |
Manufacturer | TT |
Description | N-CHANNEL POWER MOSFET IRF240 • Low RDS(on) MOSFET Transistor In A Hermetic Metal Package • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Availabl... |
Features |
ximum junction temperature (2) @VDD = 50V, L ≥ 2.1mH, Peak IL = 18A, Starting TJ = 25°C (3) @ ISD ≤ 18A, di/dt ≤ 160A/µs, VDD ≤ BVDSS, TJ ≤ 150°C, Suggested RG = 9.1Ω (4) Pulse Width ≤ 300us, δ ≤ 2%
Min.
Typ. 5 13
Max. Units nH
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that data... |
Document |
IRF240 Data Sheet
PDF 106.33KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | IRF240 |
Samsung semiconductor |
N-Channel Power MOSFET | |
2 | IRF240 |
Seme LAB |
N-Channel Power MOSFET | |
3 | IRF240 |
Intersil Corporation |
N-Channel Power MOSFET | |
4 | IRF240 |
Fairchild Semiconductor |
N-Channel Power MOSFET | |
5 | IRF240 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |