PD- 94504 HEXFET® Power MOSFET Applications l High frequency DC-DC converters l Motor Control l Uninterrutible Power Supplies Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current www.DataSheet4U..
lbf
•in (1.1N
•m)
Units
A W W/°C V V/ns °C
Thermal Resistance
Parameter
RθJC RθCS RθJA RθJA Notes through Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Junction-to-Ambient (PCB mount) are on page 11
Typ.
–
–
– 0.50
–
–
–
–
–
–
Max.
0.73
–
–
– 62 40
Units
°C/W
www.irf.com
1
7/01/02
IRF1312/S/L
Static @ TJ = 25°C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRF1312 |
International Rectifier |
(IRF1312x) HEXFET Power MOSFET | |
2 | IRF1312L |
International Rectifier |
(IRF1312x) HEXFET Power MOSFET | |
3 | IRF1312LPbF |
International Rectifier |
(IRF1312xPbF) HEXFET Power MOSFET | |
4 | IRF1312PbF |
International Rectifier |
(IRF1312xPbF) HEXFET Power MOSFET | |
5 | IRF1312SPbF |
International Rectifier |
(IRF1312xPbF) HEXFET Power MOSFET | |
6 | IRF131 |
Fairchild Semiconductor |
N-Channel Power MOSFET | |
7 | IRF131 |
Samsung semiconductor |
N-Channel Power MOSFET | |
8 | IRF1310LPBF |
International Rectifier |
Power MOSFET | |
9 | IRF1310N |
International Rectifier |
Power MOSFET | |
10 | IRF1310N |
INCHANGE |
N-Channel MOSFET | |
11 | IRF1310NL |
International Rectifier |
Power MOSFET | |
12 | IRF1310NL |
INCHANGE |
N-Channel MOSFET |