IRF1312L - International Rectifier

IRF1312L (IRF1312x) HEXFET Power MOSFET

PD- 94504 HEXFET® Power MOSFET Applications l High frequency DC-DC converters l Motor Control l Uninterrutible Power Supplies Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current www.DataSheet4U..

Features

lbf
•in (1.1N
•m) Units A W W/°C V V/ns °C Thermal Resistance Parameter RθJC RθCS RθJA RθJA Notes  through ˆ Junction-to-Case Case-to-Sink, Flat, Greased Surface ‡ Junction-to-Ambient‡ Junction-to-Ambient (PCB mount)ˆ are on page 11 Typ.
  –
  –
  – 0.50
  –
  –
  –
  –
  –
  – Max. 0.73
  –
  –
  – 62 40 Units °C/W www.irf.com 1 7/01/02 IRF1312/S/L Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate.