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IRF122 - Intersil Corporation
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designe.
IRF122 - Inchange Semiconductor
·Drain Current ID=7A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.4Ω.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRF120 |
Samsung semiconductor |
N-CHANNEL POWER MOSFET |
|
| 2 | IRF120 |
Intersil Corporation |
Power MOSFET |
|
| 3 | IRF120 |
Fairchild Semiconductor |
N-Channel Power MOSFET |
|
| 4 | IRF120 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 5 | IRF1205 |
International Rectifier |
HEXFET Power MOSFET |
|
| 6 | IRF121 |
Fairchild Semiconductor |
N-Channel Power MOSFET |
|
| 7 | IRF121 |
Samsung semiconductor |
N-Channel Power MOSFET |
|
| 8 | IRF121 |
Intersil Corporation |
N-Channel Power MOSFET |
|
| 9 | IRF121 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 10 | IRF123 |
Fairchild Semiconductor |
N-Channel Power MOSFET |
|
| 11 | IRF123 |
Samsung semiconductor |
N-Channel Power MOSFET |
|
| 12 | IRF123 |
Intersil Corporation |
N-Channel Power MOSFET |
|
