Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
IRF122 |
Click to view a larger image
| Part Number | IRF122 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Drain Current ID=7A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.4Ω(Max) ·Nanosecond Switching Speeds APPLICATIONS ·Switching power supplies ·Moto... |
| Features |
nel MOSFET Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID=250µA VGS(TH) Gate Threshold Voltage VDS= VGS; ID=250µA RDS(ON) Drain-Source On-stage Resistance VGS=10V; ID=4A IGSS Gate Source Leakage Current VGS=±20V;VDS=0 IDSS Zero Gate Voltage Drain Current VDS=100V; VGS=0 VSD Diode Forward Voltage IS=7A; VGS=0 Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance VDS=25V; VGS=0V; fT=1MHz tr Rise Time td(on) Turn-on Delay Time tf Fall Time td(off) Turn-off Delay Time RGS... |
| Document |
 IRF122 Data Sheet
PDF 42.48KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF120 |
Samsung semiconductor |
N-CHANNEL POWER MOSFET |
|
| 2 | IRF120 |
Intersil Corporation |
Power MOSFET |
|
| 3 | IRF120 |
Fairchild Semiconductor |
N-Channel Power MOSFET |
|
| 4 | IRF120 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 5 | IRF1205 |
International Rectifier |
HEXFET Power MOSFET |
|