IPW90R800C3 - Infineon Technologies AG

IPW90R800C3 CoolMOS Power Transistor

IPW90R800C3 CoolMOS™ Power Transistor Features • Lowest figure-of-merit R ON x Qg • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge Product Summary V DS @ T J=25°C R DS(on),max @ T J= 25°C Q g,typ 900 0.8 42 V Ω nC PG-TO247 CoolMOS™ .

Features

• Lowest figure-of-merit R ON x Qg
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
• Ultra low gate charge Product Summary V DS @ T J=25°C R DS(on),max @ T J= 25°C Q g,typ 900 0.8 42 V Ω nC PG-TO247 CoolMOS™ 900V is designed for:
• Quasi Resonant Flyback / Forward topologies
• PC Silverbox and consumer applications
• Industrial SMPS Type IPW90R800C3 Package PG-TO247 Marking 9R800C Maximum ratings, at T J=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditio.