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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤500mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 900 VGS.
·Static drain-source on-resistance:
RDS(on)≤500mΩ
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·High peak current capability
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
900
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
11
IDM
Drain Current-Single Pulsed
24
PD
Total Dissipation @TC=25℃
156
Tj
Max. Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
.
IPW90R500C3 - Infineon Technologies AG
IPW90R500C3 CoolMOS™ Power Transistor Features • Lowest figure-of-merit R ON x Qg • Extreme dv/dt rated • High peak cur.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IPW90R120C3 |
Infineon Technologies |
Power Transistor |
|
| 2 | IPW90R1K0C3 |
Infineon Technologies |
Power-Transistor |
|
| 3 | IPW90R1K2C3 |
Infineon Technologies AG |
CoolMOS Power Transistor |
|
| 4 | IPW90R1K2C3 |
INCHANGE |
N-Channel MOSFET |
|
| 5 | IPW90R340C3 |
Infineon Technologies |
Power Transistor |
|
| 6 | IPW90R340C3 |
INCHANGE |
N-Channel MOSFET |
|
| 7 | IPW90R800C3 |
Infineon Technologies AG |
CoolMOS Power Transistor |
|
| 8 | IPW50R140CP |
Infineon Technologies |
Power Transistor |
|
| 9 | IPW50R140CP |
INCHANGE |
N-Channel MOSFET |
|
| 10 | IPW50R190CE |
Infineon |
MOSFET |
|
| 11 | IPW50R190CE |
INCHANGE |
N-Channel MOSFET |
|
| 12 | IPW50R199CP |
Infineon Technologies |
Power Transistor |
|