CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrifi.
•
•
•
•
• Extremely low losses due to very low FOM Rdson
*Qg and Eoss Very high commutation ruggedness Easy to use/drive Qualified for industrial grade applications according to JEDEC1) Pb-free plating, Halogen free mold compound
gate pin 1
source pin 3
Applications PFC stages, hard switching PWM stages and resonant switching PWM stages for e.g. PC Silverbox, LCD & PDP TV, Lighting, Server, Telecom, UPS and Solar. Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended.
Table 1 Parameter
Key Performance Parameters Value 700 0.
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤70mΩ ·Enhancement mode: ·100% ava.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IPW65R019C7 |
Infineon Technologies |
Power Transistor | |
2 | IPW65R037C6 |
Infineon |
MOSFET | |
3 | IPW65R037C6 |
INCHANGE |
N-Channel MOSFET | |
4 | IPW65R041CFD |
Infineon |
MOSFET | |
5 | IPW65R041CFD |
INCHANGE |
N-Channel MOSFET | |
6 | IPW65R045C7 |
INCHANGE |
N-Channel MOSFET | |
7 | IPW65R045C7 |
Infineon |
MOSFET | |
8 | IPW65R048CFDA |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
9 | IPW65R048CFDA |
Infineon Technologies |
CFDA Power Transistor | |
10 | IPW65R065C7 |
Infineon |
MOSFET | |
11 | IPW65R065C7 |
INCHANGE |
N-Channel MOSFET | |
12 | IPW65R080CFD |
Infineon Technologies |
Power Transistor |