IPW65R070C6 |
Part Number | IPW65R070C6 |
Manufacturer | INCHANGE |
Description | isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤70mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and r... |
Features |
·Static drain-source on-resistance: RDS(on)≤70mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast Switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 53.5 IDM Drain Current-Single Pulsed 150 PD Total Dissipation @TC=25℃ 391 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Cha... |
Document |
IPW65R070C6 Data Sheet
PDF 237.30KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | IPW65R070C6 |
Infineon Technologies |
Power Transistor | |
2 | IPW65R019C7 |
Infineon Technologies |
Power Transistor | |
3 | IPW65R037C6 |
Infineon |
MOSFET | |
4 | IPW65R037C6 |
INCHANGE |
N-Channel MOSFET | |
5 | IPW65R041CFD |
Infineon |
MOSFET |